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Site last updated 17 Oct 2007
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e2v scientific instruments is pleased to introduce a new range of non-liquid nitrogen x-ray detectors - the SiriusSD range. Designed to easily interface with standard pulse processing electronics, the SiriusSD provides exceptional and stable performance over a wide range of input count rates.

 

SiriusSD®

silicon drift detectors

The SiriusSD detector is available in both EDX (SEM mounted with slide assembly) and XRF (various designs, no slide) formats. A choice of window materials are available, from Beryllium (8µm) to Thin Polymer (for light element x-ray transmission) and sensor active areas of 10mm² and 30mm² are offered.

The preamplifier produces industry-standard ramp/restore signals which may be input directly to most analogue or digital pulse processing systems. Another great advantage of this mode of operation is stability of peak centroid and resolution as a function of count rate.

The SiriusSD operates with a single power supply unit and can be supplied with a compact format version of e2v's highly acclaimed 'Titan' digital pulse processor.

Below are some illustrations of the main features and benefits of the SiriusSD detector - excellent resolution and stability, light element response for microanalysis applications, and systems for XRF analysis.

e2v scientific instruments SiriusSD detectors are designed to suit both OEM system manufacturer (instrument integration) and end user (detector exchange/renewal or research applications) requirements.


SiriusSD SEM and XRF detector designs




DXPC compact digital pulse processor

Best resolutions achieved can be below 130eV (see above) and with optimised operating peaking times as short as 1.6us, excellent performance can be delivered over a large range of input count rates. At shorter peaking times very high count rates can be processed.

Typical specifications for SiriusSD detectors:

Model
Sensor
Window type
Resolution
SiriusSD-10129-LE
10mm² active area
Light Element
129eV
SiriusSD-10133-LE
10mm² active area
Light Element
133eV
SiriusSD-10133-Be
10mm² active area
8µm Beryllium
133eV
SiriusSD-30140-LE
30mm² active area
Light Element
140eV
SiriusSD-30145-Be
30mm² active area
8µm Beryllium
145eV

Sensor thickness: 500µm (450µm active)

Download Data Sheet (pdf) [6MB]

For further information, or to discuss your application in detail, please contact us


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