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e2v scientific instruments is pleased to introduce a new range
of non-liquid nitrogen x-ray detectors - the SiriusSD range. Designed
to easily interface with standard pulse processing electronics,
the SiriusSD provides exceptional and stable performance over
a wide range of input count rates.
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SiriusSD®
silicon drift detectors
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The SiriusSD detector is available in both EDX (SEM mounted with
slide assembly) and XRF (various designs, no slide) formats. A
choice of window materials are available, from Beryllium (8µm)
to Thin Polymer (for light element x-ray transmission) and sensor
active areas of 10mm² and 30mm² are offered.
The preamplifier produces industry-standard ramp/restore signals
which may be input directly to most analogue or digital pulse
processing systems. Another great advantage of this mode of operation
is stability of peak centroid and resolution as a function of
count rate.
The SiriusSD operates with a single power supply unit and can
be supplied with a compact format version of e2v's highly acclaimed
'Titan' digital pulse processor.
Below are some illustrations of the main features and benefits
of the SiriusSD detector - excellent resolution and stability,
light element response for microanalysis applications, and systems
for XRF analysis.
e2v scientific instruments SiriusSD detectors are designed to
suit both OEM system manufacturer (instrument integration) and
end user (detector exchange/renewal or research applications)
requirements.
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SiriusSD SEM and XRF detector designs


DXPC compact digital pulse processor
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Best resolutions achieved can be below 130eV (see above) and
with optimised operating peaking times as short as 1.6us, excellent
performance can be delivered over a large range of input count
rates. At shorter peaking times very high count rates can be processed.
Typical specifications for SiriusSD detectors:
| Model |
Sensor
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Window type
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Resolution
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| SiriusSD-10129-LE |
10mm² active area
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Light Element
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129eV
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| SiriusSD-10133-LE |
10mm² active area
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Light Element
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133eV
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| SiriusSD-10133-Be |
10mm² active area
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8µm Beryllium
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133eV
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| SiriusSD-30140-LE |
30mm² active area
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Light Element
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140eV
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| SiriusSD-30145-Be |
30mm² active area
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8µm Beryllium
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145eV
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Sensor thickness: 500µm (450µm active)
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Download
Data Sheet (pdf) [6MB]
For further information, or to discuss your application in
detail, please contact us
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